savantic semiconductor product specification silicon npn power transistors 2SC1419 d escription with to-220 package large collector power dissipation applications for medium power amplifier applicattions pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 50 v v ceo collector- emitter voltage open base 50 v v ebo emitter-base voltage open collector 5 v i c collector current 2 a i cm collector current-peak 3 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1419 characteristics tj=25 unless otherwise specified. symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =30ma ,i b =0 50 v v (br)cbo collector- base breakdown voltage i c =1ma ,i e =0 50 v v (br)ebo emitter-base breakdown voltage i e =1ma ,i c =0 5 v v cesat collector-emitter saturation voltage i c =1a; i b =0.1a 1.0 v v besat base-emitter saturation voltage i c =1a; i b =0.1a 1.5 v i cbo collector cut-off current v cb =50v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe dc current gain i c =1a ; v ce =4v 35 320 f t transition frequency i c =0.5a ; v ce =10v 5 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SC1419 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
|